Development of a novel technology of atomic layer epitaxy for Ⅲ-Ⅴ compound semiconductors and study on its growth mechanism

A study on atomic layer epitaxy of Ⅲ-Ⅴ-based semiconductors for microstructure formation

Study of Ⅲ-Ⅵ compound semiconductors grown by molecular beam epitaxy

Study of the initial stages of molecular beam epitaxial growth of Ⅲ-Ⅴ compound semiconductors on silicon

Diffusion process in Ⅲ-Ⅴ compound semiconductors studied by in-situ transmission electron microscopy and optical spectroscopy

Interface control in In[x]Ga[1-x]As based Ⅲ-Ⅴ compound semiconductor heterostructures by molecular beam epitaxy