Al[x]Ga[1-x]Sbアバランシェフォトダイオードに関する研究
Development of In[x]Ga[1-x]As-based ohmic contacts to n-type GaAs prepared by RF-sputtering
Study of ion-implantations into Al[x]Ga[1-x]As and its applications to heterojunction bipolar transistors
Last Updated:
Uploaded: 2020-12-17